TY - JOUR
T1 - Trends for the crystallinity, optical and electrical properties of post-thermal annealed ZnO nanorods
AU - Wong, Chun Yuen
AU - Lai, Lo Ming
AU - Leung, Siu Ling
AU - Roy, V. A.L.
PY - 2009/8/25
Y1 - 2009/8/25
N2 - Hexagonal ZnO nanorods have been prepared by a simple low-temperature hydrothermal method using ZnCl2 and aqueous ammonia as reactants. The crystallinity, photoluminescence (atomic defects) and charge transport properties of ZnO can be tuned by post-thermal annealing (in the range of 200-500 °C under argon atmosphere). It was found that (1) the crystallinity of the nanorods first increases and then decreases with the annealing temperature, and the optimal annealing temperature was found to be about 300 °C; (2) nanorods with the highest crystallinity exhibited the highest photoluminescence intensity and the highest band-edge to defect-related emission intensity ratio; (3) the nanorods became conducting rather than semiconducting upon annealing treatment, and nanorods with the highest crystallinity and photoluminescence intensity revealed the highest current densities. These trends provide insights for tuning ZnO opto-electronic properties for various applications.
AB - Hexagonal ZnO nanorods have been prepared by a simple low-temperature hydrothermal method using ZnCl2 and aqueous ammonia as reactants. The crystallinity, photoluminescence (atomic defects) and charge transport properties of ZnO can be tuned by post-thermal annealing (in the range of 200-500 °C under argon atmosphere). It was found that (1) the crystallinity of the nanorods first increases and then decreases with the annealing temperature, and the optimal annealing temperature was found to be about 300 °C; (2) nanorods with the highest crystallinity exhibited the highest photoluminescence intensity and the highest band-edge to defect-related emission intensity ratio; (3) the nanorods became conducting rather than semiconducting upon annealing treatment, and nanorods with the highest crystallinity and photoluminescence intensity revealed the highest current densities. These trends provide insights for tuning ZnO opto-electronic properties for various applications.
KW - Annealing
KW - Zinc oxide
UR - http://www.scopus.com/inward/record.url?scp=69749108133&partnerID=8YFLogxK
U2 - 10.1016/j.mseb.2009.07.007
DO - 10.1016/j.mseb.2009.07.007
M3 - Article
AN - SCOPUS:69749108133
SN - 0921-5107
VL - 164
SP - 80
EP - 84
JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology
JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology
IS - 2
ER -