The effect of carrier-induced change on the optical properties of AlGaAs-GaAs intermixed quantum wells

Michael C.Y. Chan, Paul C.K. Kwok, E. Herbert Li

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)

Abstract

The carrier-induced effects in the change of absorption and refractive index on the AlGaAs-GaAs intermixing modified quantum wells (QW's) have been investigated theoretically. Band-filling, bandgap shrinkage, and free-carrier absorption have been included for various carrier concentrations. The Schrödinger and the Poisson equations have been considered self-consistently. The polarized absorption coefficients are calculated using the Kane k · p method for a four band model and followed by the Kramers-Krönig transformation to obtain the refractive index change. The results obtained show a more enhanced bandgap renormalization and change of absorption, but a reduced change in refractive index for the larger intermixing extents. It is important to know the carrier-induced optical parameter changes the intermixed QW's because of their recent interests in photonics.

Original languageEnglish
Pages (from-to)685-694
Number of pages10
JournalIEEE Journal on Selected Topics in Quantum Electronics
Volume4
Issue number4
DOIs
Publication statusPublished - Jul 1998

Keywords

  • Charge carrier processes
  • Optical refraction
  • Quantum wells
  • Quantum-well interdiffusion
  • Quantum-well intermixing

Fingerprint

Dive into the research topics of 'The effect of carrier-induced change on the optical properties of AlGaAs-GaAs intermixed quantum wells'. Together they form a unique fingerprint.

Cite this