Abstract
The carrier-induced effects in the change of absorption and refractive index on the AlGaAs-GaAs intermixing modified quantum wells (QW's) have been investigated theoretically. Band-filling, bandgap shrinkage, and free-carrier absorption have been included for various carrier concentrations. The Schrödinger and the Poisson equations have been considered self-consistently. The polarized absorption coefficients are calculated using the Kane k · p method for a four band model and followed by the Kramers-Krönig transformation to obtain the refractive index change. The results obtained show a more enhanced bandgap renormalization and change of absorption, but a reduced change in refractive index for the larger intermixing extents. It is important to know the carrier-induced optical parameter changes the intermixed QW's because of their recent interests in photonics.
Original language | English |
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Pages (from-to) | 685-694 |
Number of pages | 10 |
Journal | IEEE Journal on Selected Topics in Quantum Electronics |
Volume | 4 |
Issue number | 4 |
DOIs | |
Publication status | Published - Jul 1998 |
Keywords
- Charge carrier processes
- Optical refraction
- Quantum wells
- Quantum-well interdiffusion
- Quantum-well intermixing