Surface engineering of reduced graphene oxide for controllable ambipolar flash memories

Su Ting Han, Ye Zhou, Prashant Sonar, Huaixin Wei, Li Zhou, Yan Yan, Chun Sing Lee, V. A.L. Roy

Research output: Contribution to journalArticlepeer-review

33 Citations (Scopus)

Abstract

Tunable charge-trapping behaviors including unipolar charge trapping of one type of charge carrier and ambipolar trapping of both electrons and holes in a complementary manner is highly desirable for low power consumption multibit flash memory design. Here, we adopt a strategy of tuning the Fermi level of reduced graphene oxide (rGO) through self-assembled monolayer (SAM) functionalization and form p-type and n-type doped rGO with a wide range of manipulation on work function. The functionalized rGO can act as charge-trapping layer in ambipolar flash memories, and a dramatic transition of charging behavior from unipolar trapping of electrons to ambipolar trapping and eventually to unipolar trapping of holes was achieved. Adjustable hole/electron injection barriers induce controllable Vth shift in the memory transistor after programming operation. Finally, we transfer the ambipolar memory on flexible substrates and study their charge-trapping properties at various bending cycles. The SAM-functionalized rGO can be a promising candidate for next-generation nonvolatile memories.

Original languageEnglish
Pages (from-to)1699-1708
Number of pages10
JournalACS Applied Materials and Interfaces
Volume7
Issue number3
DOIs
Publication statusPublished - 28 Jan 2015
Externally publishedYes

Keywords

  • ambipolar
  • charge-trapping behavior
  • flash memory
  • reduced graphene oxide
  • self-assembled monolayer
  • work function

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