Abstract
Tunable charge-trapping behaviors including unipolar charge trapping of one type of charge carrier and ambipolar trapping of both electrons and holes in a complementary manner is highly desirable for low power consumption multibit flash memory design. Here, we adopt a strategy of tuning the Fermi level of reduced graphene oxide (rGO) through self-assembled monolayer (SAM) functionalization and form p-type and n-type doped rGO with a wide range of manipulation on work function. The functionalized rGO can act as charge-trapping layer in ambipolar flash memories, and a dramatic transition of charging behavior from unipolar trapping of electrons to ambipolar trapping and eventually to unipolar trapping of holes was achieved. Adjustable hole/electron injection barriers induce controllable Vth shift in the memory transistor after programming operation. Finally, we transfer the ambipolar memory on flexible substrates and study their charge-trapping properties at various bending cycles. The SAM-functionalized rGO can be a promising candidate for next-generation nonvolatile memories.
Original language | English |
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Pages (from-to) | 1699-1708 |
Number of pages | 10 |
Journal | ACS Applied Materials and Interfaces |
Volume | 7 |
Issue number | 3 |
DOIs | |
Publication status | Published - 28 Jan 2015 |
Externally published | Yes |
Keywords
- ambipolar
- charge-trapping behavior
- flash memory
- reduced graphene oxide
- self-assembled monolayer
- work function