Abstract
We introduce an organometal halide perovskite (CH3NH3PbI3), as a hole injection layer (HIL) to accelerate hole injection and transport in tris-(8-hydroxyquinoline) aluminum-based organic light-emitting diodes (OLEDs). The excellent charge mobility of CH3NH3PbI3 along with the better interface contacts induced by the CH3NH3PbI3 HIL improved the charge balance and thus enhanced device performance compared with that of OLEDs without a HIL and with a poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) HIL. Maximum luminance of 19110 cd m−2 and power efficiency of 3.210 lm W−1 were obtained. Also, besides more balanced charge recombination, the non-aqueous fabrication of the perovskite HIL and the chemical stability of indium tin oxide in contact with CH3NH3PbI3 led to increased device stability and durability, giving a half-life time as long as 31.7 h.
| Original language | English |
|---|---|
| Pages (from-to) | 257-263 |
| Number of pages | 7 |
| Journal | Organic Electronics |
| Volume | 51 |
| DOIs | |
| Publication status | Published - Dec 2017 |
| Externally published | Yes |
Keywords
- Hole injection layer
- Organic light-emitting diode
- Organometal halide perovskites
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