TY - GEN
T1 - Nanocomposite field effect transistors based on zinc oxide/polymer blends
AU - Roy, Vellaisamy A.L.
AU - Xu, Zong Xiang
AU - Stallinga, Peter
AU - Xiang, Hai Feng
AU - Yan, Beiping
AU - Che, Chi Ming
PY - 2007
Y1 - 2007
N2 - Significant progress is being made in the realization of thin-film transistors (TFTs) for application in various electronic devices and circuits [1-5]. Currently, one of the important challenges in this area is to design low-cost and stable organic semiconductors that possess high field-effect mobilities for constructing low-power high-speed transistor devices. However, there are only limited stable and cheap organic semiconductors that are applicable for OTFT applications. Here, we report the work in our laboratory that focus on stable, inexpensive and high field-effect mobility nano-composite materials for the potential application in OTFT technologies. Solution processed polymer based nano-composite field effect transistors with wide band gap semi-conducting ZnO nano-tetrapods and nano-crystals dispersed in the polymer matrix were utilized to study the field effect behaviour. The electrical characteristics of polymer based wide band gap nano-crystal or nano-tetrapod composite devices exhibit an increase in the hole mobility up to two orders of magnitude higher than the pristine polymer.
AB - Significant progress is being made in the realization of thin-film transistors (TFTs) for application in various electronic devices and circuits [1-5]. Currently, one of the important challenges in this area is to design low-cost and stable organic semiconductors that possess high field-effect mobilities for constructing low-power high-speed transistor devices. However, there are only limited stable and cheap organic semiconductors that are applicable for OTFT applications. Here, we report the work in our laboratory that focus on stable, inexpensive and high field-effect mobility nano-composite materials for the potential application in OTFT technologies. Solution processed polymer based nano-composite field effect transistors with wide band gap semi-conducting ZnO nano-tetrapods and nano-crystals dispersed in the polymer matrix were utilized to study the field effect behaviour. The electrical characteristics of polymer based wide band gap nano-crystal or nano-tetrapod composite devices exhibit an increase in the hole mobility up to two orders of magnitude higher than the pristine polymer.
UR - http://www.scopus.com/inward/record.url?scp=47349131216&partnerID=8YFLogxK
U2 - 10.1109/IMNC.2007.4456126
DO - 10.1109/IMNC.2007.4456126
M3 - Conference contribution
AN - SCOPUS:47349131216
SN - 4990247248
SN - 9784990247249
T3 - Digest of Papers - Microprocesses and Nanotechnology 2007; 20th International Microprocesses and Nanotechnology Conference, MNC
SP - 104
EP - 105
BT - Digest of Papers - Microprocesses and Nanotechnology 2007; 20th International Microprocesses and Nanotechnology Conference, MNC
T2 - s20th International Microprocesses and Nanotechnology Conference, MNC 2007
Y2 - 5 November 2007 through 8 November 2007
ER -