MOS characteristics of NO-grown oxynitrides on n-type 6H-SiC

S. Chakraborty; P. T. Lai; P. C.K. Kwok

doi:10.1016/S0026-2714(01)00220-7

MOS characteristics of NO-grown oxynitrides on n-type 6H-SiC

S. Chakraborty, P. T. Lai, P. C.K. Kwok

Hong Kong Metropolitan University

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

The growth of high-quality thin oxynitrides in nitric oxide (NO) ambient on n-type 6H-SiC substrate is reported. The performance and reliability of NO-grown oxynitride are compared with those of NO-annealed, N₂O-grown, N₂O-annealed and N₂-annealed oxides. NO-grown device shows the best interfacial properties and oxide reliability among all the samples. X-ray photoelectron spectroscopy analysis indicates the highest nitrogen pileup at the SiO₂/SiC interface of NO-grown sample. Therefore, the best performance of NO-grown sample can be related to the fact that oxide growth in NO has the advantage of providing higher nitrogen accumulation at the SiO₂/SiC interface and in the oxide bulk than the other growth techniques.

Original language	English
Pages (from-to)	455-458
Number of pages	4
Journal	Microelectronics Reliability
Volume	42
Issue number	3
DOIs	https://doi.org/10.1016/S0026-2714(01)00220-7
Publication status	Published - Mar 2002

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@article{327458a8c491404cbe4d35fd1838531f,

title = "MOS characteristics of NO-grown oxynitrides on n-type 6H-SiC",

abstract = "The growth of high-quality thin oxynitrides in nitric oxide (NO) ambient on n-type 6H-SiC substrate is reported. The performance and reliability of NO-grown oxynitride are compared with those of NO-annealed, N2O-grown, N2O-annealed and N2-annealed oxides. NO-grown device shows the best interfacial properties and oxide reliability among all the samples. X-ray photoelectron spectroscopy analysis indicates the highest nitrogen pileup at the SiO2/SiC interface of NO-grown sample. Therefore, the best performance of NO-grown sample can be related to the fact that oxide growth in NO has the advantage of providing higher nitrogen accumulation at the SiO2/SiC interface and in the oxide bulk than the other growth techniques.",

author = "S. Chakraborty and Lai, \{P. T.\} and Kwok, \{P. C.K.\}",

note = "Funding Information: Authors wish to thank Mr. C.L. Chan for his technical support. Financial support of RGC, Hong Kong is also gratefully acknowledged. Authors are also grateful to Dr. L.T. Weng, MCPF, Hong Kong University of Science and Technology for XPS study.",

year = "2002",

month = mar,

doi = "10.1016/S0026-2714(01)00220-7",

language = "English",

volume = "42",

pages = "455--458",

journal = "Microelectronics Reliability",

issn = "0026-2714",

publisher = "Elsevier Ltd.",

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TY - JOUR

T1 - MOS characteristics of NO-grown oxynitrides on n-type 6H-SiC

AU - Chakraborty, S.

AU - Lai, P. T.

AU - Kwok, P. C.K.

N1 - Funding Information: Authors wish to thank Mr. C.L. Chan for his technical support. Financial support of RGC, Hong Kong is also gratefully acknowledged. Authors are also grateful to Dr. L.T. Weng, MCPF, Hong Kong University of Science and Technology for XPS study.

PY - 2002/3

Y1 - 2002/3

N2 - The growth of high-quality thin oxynitrides in nitric oxide (NO) ambient on n-type 6H-SiC substrate is reported. The performance and reliability of NO-grown oxynitride are compared with those of NO-annealed, N2O-grown, N2O-annealed and N2-annealed oxides. NO-grown device shows the best interfacial properties and oxide reliability among all the samples. X-ray photoelectron spectroscopy analysis indicates the highest nitrogen pileup at the SiO2/SiC interface of NO-grown sample. Therefore, the best performance of NO-grown sample can be related to the fact that oxide growth in NO has the advantage of providing higher nitrogen accumulation at the SiO2/SiC interface and in the oxide bulk than the other growth techniques.

AB - The growth of high-quality thin oxynitrides in nitric oxide (NO) ambient on n-type 6H-SiC substrate is reported. The performance and reliability of NO-grown oxynitride are compared with those of NO-annealed, N2O-grown, N2O-annealed and N2-annealed oxides. NO-grown device shows the best interfacial properties and oxide reliability among all the samples. X-ray photoelectron spectroscopy analysis indicates the highest nitrogen pileup at the SiO2/SiC interface of NO-grown sample. Therefore, the best performance of NO-grown sample can be related to the fact that oxide growth in NO has the advantage of providing higher nitrogen accumulation at the SiO2/SiC interface and in the oxide bulk than the other growth techniques.

UR - https://www.scopus.com/pages/publications/0036496492

U2 - 10.1016/S0026-2714(01)00220-7

DO - 10.1016/S0026-2714(01)00220-7

M3 - Article

AN - SCOPUS:0036496492

SN - 0026-2714

VL - 42

SP - 455

EP - 458

JO - Microelectronics Reliability

JF - Microelectronics Reliability

IS - 3

ER -

MOS characteristics of NO-grown oxynitrides on n-type 6H-SiC

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