Indium tin oxide nanowires growth by dc sputtering

M. K. Fung; Y. C. Sun; A. M.C. Ng; X. Y. Chen; K. K. Wong; A. B. Djurišíc; W. K. Chan

doi:10.1007/s00339-011-6372-6

Indium tin oxide nanowires growth by dc sputtering

M. K. Fung, Y. C. Sun, A. M.C. Ng, X. Y. Chen, K. K. Wong, A. B. Djurišíc, W. K. Chan

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32 Citations (Scopus)

Abstract

Indium tin oxide nanowires have been grown by dc sputtering on different substrates without the use of catalysts or oblique deposition. The nanowire length was of the order of several μm, while their diameter was ∼50- 100 nm. Small side branches on the nanowires were frequently observed. The nanowires were characterized by scanning electron microscopy, transmission electron microscopy, and X-ray diffraction. The growth mechanism of the nanowires is discussed.

Original language	English
Pages (from-to)	1075-1080
Number of pages	6
Journal	Applied Physics A: Materials Science and Processing
Volume	104
Issue number	4
DOIs	https://doi.org/10.1007/s00339-011-6372-6
Publication status	Published - Sept 2011
Externally published	Yes

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10.1007/s00339-011-6372-6

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title = "Indium tin oxide nanowires growth by dc sputtering",

abstract = "Indium tin oxide nanowires have been grown by dc sputtering on different substrates without the use of catalysts or oblique deposition. The nanowire length was of the order of several μm, while their diameter was ∼50- 100 nm. Small side branches on the nanowires were frequently observed. The nanowires were characterized by scanning electron microscopy, transmission electron microscopy, and X-ray diffraction. The growth mechanism of the nanowires is discussed.",

author = "Fung, {M. K.} and Sun, {Y. C.} and Ng, {A. M.C.} and Chen, {X. Y.} and Wong, {K. K.} and Djuri{\v s}{\'i}c, {A. B.} and Chan, {W. K.}",

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AU - Wong, K. K.

AU - Djurišíc, A. B.

AU - Chan, W. K.

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AB - Indium tin oxide nanowires have been grown by dc sputtering on different substrates without the use of catalysts or oblique deposition. The nanowire length was of the order of several μm, while their diameter was ∼50- 100 nm. Small side branches on the nanowires were frequently observed. The nanowires were characterized by scanning electron microscopy, transmission electron microscopy, and X-ray diffraction. The growth mechanism of the nanowires is discussed.

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Indium tin oxide nanowires growth by dc sputtering

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