Improving the chemical potential of nitrogen to tune the electron density and mobility of ZnSnN2

Fan Ye; Qian Qian Chen; Xing Min Cai; Yi Zhu Xie; Xiu Fang Ma; Karthikeyan Vaithinathan; Dong Ping Zhang; Ping Fan; V. A.L. Roy

doi:10.1039/c9tc06965h

Improving the chemical potential of nitrogen to tune the electron density and mobility of ZnSnN₂

Fan Ye, Qian Qian Chen, Xing Min Cai, Yi Zhu Xie, Xiu Fang Ma, Karthikeyan Vaithinathan, Dong Ping Zhang, Ping Fan, V. A.L. Roy

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

To meet device applications, it is essential to fabricate nondegenerate ZnSnN₂ with higher mobility. Herein, the chemical potential of nitrogen was improved under Zn-rich sputtering conditions and nondegenerate ZnSnN₂ with mobility higher than 20 cm² V^-1 s^-1 was successfully fabricated. The properties of the samples were characterized. The obtained ZnSnN₂ is wurstite. Band conduction is observed in the range 300-100 K and nearest neighbour hopping is observed in the range 100-70 K. The forbidden band gap is about 1.43 eV and Sn substituting Zn is the major donor, whose ionization energy is 34.6 meV. Improving the chemical potential of nitrogen under Zn-rich conditions effectively changes the off-stoichiometry of ZnSnN₂ and unintentionally increases oxygen doping, which finally leads to a decrease in electron density and an increase in mobility.

Original language	English
Pages (from-to)	4314-4320
Number of pages	7
Journal	Journal of Materials Chemistry C
Volume	8
Issue number	13
DOIs	https://doi.org/10.1039/c9tc06965h
Publication status	Published - 7 Apr 2020
Externally published	Yes

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title = "Improving the chemical potential of nitrogen to tune the electron density and mobility of ZnSnN2",

abstract = "To meet device applications, it is essential to fabricate nondegenerate ZnSnN2 with higher mobility. Herein, the chemical potential of nitrogen was improved under Zn-rich sputtering conditions and nondegenerate ZnSnN2 with mobility higher than 20 cm2 V-1 s-1 was successfully fabricated. The properties of the samples were characterized. The obtained ZnSnN2 is wurstite. Band conduction is observed in the range 300-100 K and nearest neighbour hopping is observed in the range 100-70 K. The forbidden band gap is about 1.43 eV and Sn substituting Zn is the major donor, whose ionization energy is 34.6 meV. Improving the chemical potential of nitrogen under Zn-rich conditions effectively changes the off-stoichiometry of ZnSnN2 and unintentionally increases oxygen doping, which finally leads to a decrease in electron density and an increase in mobility.",

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language = "English",

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T1 - Improving the chemical potential of nitrogen to tune the electron density and mobility of ZnSnN2

AU - Ye, Fan

AU - Chen, Qian Qian

AU - Cai, Xing Min

AU - Xie, Yi Zhu

AU - Ma, Xiu Fang

AU - Vaithinathan, Karthikeyan

AU - Zhang, Dong Ping

AU - Fan, Ping

AU - Roy, V. A.L.

PY - 2020/4/7

Y1 - 2020/4/7

N2 - To meet device applications, it is essential to fabricate nondegenerate ZnSnN2 with higher mobility. Herein, the chemical potential of nitrogen was improved under Zn-rich sputtering conditions and nondegenerate ZnSnN2 with mobility higher than 20 cm2 V-1 s-1 was successfully fabricated. The properties of the samples were characterized. The obtained ZnSnN2 is wurstite. Band conduction is observed in the range 300-100 K and nearest neighbour hopping is observed in the range 100-70 K. The forbidden band gap is about 1.43 eV and Sn substituting Zn is the major donor, whose ionization energy is 34.6 meV. Improving the chemical potential of nitrogen under Zn-rich conditions effectively changes the off-stoichiometry of ZnSnN2 and unintentionally increases oxygen doping, which finally leads to a decrease in electron density and an increase in mobility.

AB - To meet device applications, it is essential to fabricate nondegenerate ZnSnN2 with higher mobility. Herein, the chemical potential of nitrogen was improved under Zn-rich sputtering conditions and nondegenerate ZnSnN2 with mobility higher than 20 cm2 V-1 s-1 was successfully fabricated. The properties of the samples were characterized. The obtained ZnSnN2 is wurstite. Band conduction is observed in the range 300-100 K and nearest neighbour hopping is observed in the range 100-70 K. The forbidden band gap is about 1.43 eV and Sn substituting Zn is the major donor, whose ionization energy is 34.6 meV. Improving the chemical potential of nitrogen under Zn-rich conditions effectively changes the off-stoichiometry of ZnSnN2 and unintentionally increases oxygen doping, which finally leads to a decrease in electron density and an increase in mobility.

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JF - Journal of Materials Chemistry C

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Improving the chemical potential of nitrogen to tune the electron density and mobility of ZnSnN₂

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