GaN-nanowire-based dye-sensitized solar cells

X. Y. Chen; C. T. Yip; M. K. Fung; A. B. Djurišić; W. K. Chan

doi:10.1007/s00339-010-5580-9

GaN-nanowire-based dye-sensitized solar cells

X. Y. Chen
, C. T. Yip
, M. K. Fung
, A. B. Djurišić
, W. K. Chan

Research output: Contribution to journal › Article › peer-review

28 Citations (Scopus)

Abstract

GaN nanowires typically exhibit high electron mobility and excellent chemical stability. However, stability of GaN is detrimental for successful attachment of dye molecules and its application in dye-sensitized solar cells (DSSCs). Here we demonstrate DSSCs based on GaN/gallium oxide and GaN/TiO _x core-shell structures, and we show that coating of GaN nanowires with a TiO _x shell significantly increases dye adsorption and consequently photovoltaic performance. The best cells exhibited short circuit current density of 1.83 mA/cm² and power conversion efficiency of 0.44% under AM 1.5 simulated solar illumination.

Original language	English
Pages (from-to)	15-19
Number of pages	5
Journal	Applied Physics A: Materials Science and Processing
Volume	100
Issue number	1
DOIs	https://doi.org/10.1007/s00339-010-5580-9
Publication status	Published - Jul 2010
Externally published	Yes

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title = "GaN-nanowire-based dye-sensitized solar cells",

abstract = "GaN nanowires typically exhibit high electron mobility and excellent chemical stability. However, stability of GaN is detrimental for successful attachment of dye molecules and its application in dye-sensitized solar cells (DSSCs). Here we demonstrate DSSCs based on GaN/gallium oxide and GaN/TiO x core-shell structures, and we show that coating of GaN nanowires with a TiO x shell significantly increases dye adsorption and consequently photovoltaic performance. The best cells exhibited short circuit current density of 1.83 mA/cm2 and power conversion efficiency of 0.44\% under AM 1.5 simulated solar illumination.",

author = "Chen, \{X. Y.\} and Yip, \{C. T.\} and Fung, \{M. K.\} and Djuri{\v s}i{\'c}, \{A. B.\} and Chan, \{W. K.\}",

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T1 - GaN-nanowire-based dye-sensitized solar cells

AU - Chen, X. Y.

AU - Yip, C. T.

AU - Fung, M. K.

AU - Djurišić, A. B.

AU - Chan, W. K.

PY - 2010/7

Y1 - 2010/7

N2 - GaN nanowires typically exhibit high electron mobility and excellent chemical stability. However, stability of GaN is detrimental for successful attachment of dye molecules and its application in dye-sensitized solar cells (DSSCs). Here we demonstrate DSSCs based on GaN/gallium oxide and GaN/TiO x core-shell structures, and we show that coating of GaN nanowires with a TiO x shell significantly increases dye adsorption and consequently photovoltaic performance. The best cells exhibited short circuit current density of 1.83 mA/cm2 and power conversion efficiency of 0.44% under AM 1.5 simulated solar illumination.

AB - GaN nanowires typically exhibit high electron mobility and excellent chemical stability. However, stability of GaN is detrimental for successful attachment of dye molecules and its application in dye-sensitized solar cells (DSSCs). Here we demonstrate DSSCs based on GaN/gallium oxide and GaN/TiO x core-shell structures, and we show that coating of GaN nanowires with a TiO x shell significantly increases dye adsorption and consequently photovoltaic performance. The best cells exhibited short circuit current density of 1.83 mA/cm2 and power conversion efficiency of 0.44% under AM 1.5 simulated solar illumination.

UR - https://www.scopus.com/pages/publications/77954089211

U2 - 10.1007/s00339-010-5580-9

DO - 10.1007/s00339-010-5580-9

M3 - Article

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VL - 100

SP - 15

EP - 19

JO - Applied Physics A: Materials Science and Processing

JF - Applied Physics A: Materials Science and Processing

IS - 1

ER -

GaN-nanowire-based dye-sensitized solar cells

Abstract

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