Field-effect transistor fabricated with nickel(II) etioporphyrin-I micrometer-sized crystals

Zong Xiang Xu; Hai Feng Xiang; V. A.L. Roy; Stephen Sin Yin Chui; Chi Ming Che; P. T. Lai

doi:10.1063/1.3040319

Field-effect transistor fabricated with nickel(II) etioporphyrin-I micrometer-sized crystals

Zong Xiang Xu
, Hai Feng Xiang
, V. A.L. Roy
, Stephen Sin Yin Chui
, Chi Ming Che
, P. T. Lai

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

We fabricated a field-effect transistor using micrometer-sized crystals (10-40 μm) of nickel(II) etioporphyrin-I NiOX as active material. Microwires and micrometer-sized crystals of NiOX were obtained by heating NiOX thin film under high vacuum. Through this method, traps due to solvent molecules could be avoided. The transistor fabricated with these micrometer-sized crystals has a hole mobility of 0.15±0.03 cm² V^-1s^-1, which is two orders of magnitude higher than that obtained with the thin film structure (1.1× 10^-3 cm² V^-1 s ^-1).

Original language	English
Article number	223305
Journal	Applied Physics Letters
Volume	93
Issue number	22
DOIs	https://doi.org/10.1063/1.3040319
Publication status	Published - 2008
Externally published	Yes

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10.1063/1.3040319

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@article{f6fbc8818bb04cb6b8df07469d5972be,

title = "Field-effect transistor fabricated with nickel(II) etioporphyrin-I micrometer-sized crystals",

abstract = "We fabricated a field-effect transistor using micrometer-sized crystals (10-40 μm) of nickel(II) etioporphyrin-I NiOX as active material. Microwires and micrometer-sized crystals of NiOX were obtained by heating NiOX thin film under high vacuum. Through this method, traps due to solvent molecules could be avoided. The transistor fabricated with these micrometer-sized crystals has a hole mobility of 0.15±0.03 cm2 V-1s-1, which is two orders of magnitude higher than that obtained with the thin film structure (1.1{\texttimes} 10-3 cm2 V-1 s -1).",

author = "Xu, \{Zong Xiang\} and Xiang, \{Hai Feng\} and Roy, \{V. A.L.\} and Chui, \{Stephen Sin Yin\} and Che, \{Chi Ming\} and Lai, \{P. T.\}",

note = "Funding Information: This work was supported by the Joint Research Scheme NSFC/RGC (Grant No. N\_HKU 742/04), the University Development Fund (Nanotechnology Research Institute, Grant No. 00600009) of The University of Hong Kong, the Innovation Technology Fund (ITF), the Strategic Theme on Organic Electronics, and RGC of HKSAR (Project Nos. HKU 7158/04E and HKU 200807176003). We acknowledge Clover \& Sunic Systems Ltd. for their support with the fabrication system housed at The University of Hong Kong.",

year = "2008",

doi = "10.1063/1.3040319",

language = "English",

volume = "93",

number = "22",

}

TY - JOUR

T1 - Field-effect transistor fabricated with nickel(II) etioporphyrin-I micrometer-sized crystals

AU - Xu, Zong Xiang

AU - Xiang, Hai Feng

AU - Roy, V. A.L.

AU - Chui, Stephen Sin Yin

AU - Che, Chi Ming

AU - Lai, P. T.

N1 - Funding Information: This work was supported by the Joint Research Scheme NSFC/RGC (Grant No. N_HKU 742/04), the University Development Fund (Nanotechnology Research Institute, Grant No. 00600009) of The University of Hong Kong, the Innovation Technology Fund (ITF), the Strategic Theme on Organic Electronics, and RGC of HKSAR (Project Nos. HKU 7158/04E and HKU 200807176003). We acknowledge Clover & Sunic Systems Ltd. for their support with the fabrication system housed at The University of Hong Kong.

PY - 2008

Y1 - 2008

N2 - We fabricated a field-effect transistor using micrometer-sized crystals (10-40 μm) of nickel(II) etioporphyrin-I NiOX as active material. Microwires and micrometer-sized crystals of NiOX were obtained by heating NiOX thin film under high vacuum. Through this method, traps due to solvent molecules could be avoided. The transistor fabricated with these micrometer-sized crystals has a hole mobility of 0.15±0.03 cm2 V-1s-1, which is two orders of magnitude higher than that obtained with the thin film structure (1.1× 10-3 cm2 V-1 s -1).

AB - We fabricated a field-effect transistor using micrometer-sized crystals (10-40 μm) of nickel(II) etioporphyrin-I NiOX as active material. Microwires and micrometer-sized crystals of NiOX were obtained by heating NiOX thin film under high vacuum. Through this method, traps due to solvent molecules could be avoided. The transistor fabricated with these micrometer-sized crystals has a hole mobility of 0.15±0.03 cm2 V-1s-1, which is two orders of magnitude higher than that obtained with the thin film structure (1.1× 10-3 cm2 V-1 s -1).

UR - https://www.scopus.com/pages/publications/57349113069

U2 - 10.1063/1.3040319

DO - 10.1063/1.3040319

M3 - Article

AN - SCOPUS:57349113069

SN - 0003-6951

VL - 93

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 22

M1 - 223305

ER -

Field-effect transistor fabricated with nickel(II) etioporphyrin-I micrometer-sized crystals

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