@article{f6fbc8818bb04cb6b8df07469d5972be,
title = "Field-effect transistor fabricated with nickel(II) etioporphyrin-I micrometer-sized crystals",
abstract = "We fabricated a field-effect transistor using micrometer-sized crystals (10-40 μm) of nickel(II) etioporphyrin-I NiOX as active material. Microwires and micrometer-sized crystals of NiOX were obtained by heating NiOX thin film under high vacuum. Through this method, traps due to solvent molecules could be avoided. The transistor fabricated with these micrometer-sized crystals has a hole mobility of 0.15±0.03 cm2 V-1s-1, which is two orders of magnitude higher than that obtained with the thin film structure (1.1× 10-3 cm2 V-1 s -1).",
author = "Xu, {Zong Xiang} and Xiang, {Hai Feng} and Roy, {V. A.L.} and Chui, {Stephen Sin Yin} and Che, {Chi Ming} and Lai, {P. T.}",
note = "Funding Information: This work was supported by the Joint Research Scheme NSFC/RGC (Grant No. N_HKU 742/04), the University Development Fund (Nanotechnology Research Institute, Grant No. 00600009) of The University of Hong Kong, the Innovation Technology Fund (ITF), the Strategic Theme on Organic Electronics, and RGC of HKSAR (Project Nos. HKU 7158/04E and HKU 200807176003). We acknowledge Clover & Sunic Systems Ltd. for their support with the fabrication system housed at The University of Hong Kong.",
year = "2008",
doi = "10.1063/1.3040319",
language = "English",
volume = "93",
number = "22",
}