Field-effect transistor fabricated with nickel(II) etioporphyrin-I micrometer-sized crystals

Zong Xiang Xu, Hai Feng Xiang, V. A.L. Roy, Stephen Sin Yin Chui, Chi Ming Che, P. T. Lai

Research output: Contribution to journalArticlepeer-review

13 Citations (Scopus)

Abstract

We fabricated a field-effect transistor using micrometer-sized crystals (10-40 μm) of nickel(II) etioporphyrin-I NiOX as active material. Microwires and micrometer-sized crystals of NiOX were obtained by heating NiOX thin film under high vacuum. Through this method, traps due to solvent molecules could be avoided. The transistor fabricated with these micrometer-sized crystals has a hole mobility of 0.15±0.03 cm2 V-1s-1, which is two orders of magnitude higher than that obtained with the thin film structure (1.1× 10-3 cm2 V-1 s -1).

Original languageEnglish
Article number223305
JournalApplied Physics Letters
Volume93
Issue number22
DOIs
Publication statusPublished - 2008
Externally publishedYes

Fingerprint

Dive into the research topics of 'Field-effect transistor fabricated with nickel(II) etioporphyrin-I micrometer-sized crystals'. Together they form a unique fingerprint.

Cite this