Emerging perovskite materials for high density data storage and artificial synapses

Yan Wang, Ziyu Lv, Li Zhou, Xiaoli Chen, Jinrui Chen, Ye Zhou, V. A.L. Roy, Su Ting Han

Research output: Contribution to journalReview articlepeer-review

122 Citations (Scopus)

Abstract

Since the discovery of perovskite materials with the general chemical formula ABX3 in 1839, research on perovskite materials has drawn exponentially greater attention, owing to their flexible properties, including their ferroelectric, piezoelectric, and dielectric, as well as resistive switching, properties. Perovskite materials have high potential for developing nonvolatile high-density data storage devices. In this review, we summarized the current development of the application of perovskites in nonvolatile memories with an emphasis on the resistive switching properties. The unique advances of perovskite materials are introduced, followed by an assortment of the characterisations of their compositions and crystal structures. The insight into perovskite materials in artificial synapses has also concluded with predictable opportunities and challenges in this promising field.

Original languageEnglish
Pages (from-to)1600-1617
Number of pages18
JournalJournal of Materials Chemistry C
Volume6
Issue number7
DOIs
Publication statusPublished - 2018
Externally publishedYes

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