Dual-Mode Reconfigurable Split-Gate Logic Transistor through Van der Waals Integration

Xue Chen, Haozhe Xue, Yu Wen, Kai You, Bei Jiang, Guanglong Ding, Kui Zhou, Zherui Zhao, Yan Yan, Meng Zhang, Vellaisamy A.L. Roy, Su Ting Han, Feng Li, Chi Ching Kuo, Ye Zhou

Research output: Contribution to journalArticlepeer-review

Abstract

As silicon-based transistors approach their physical size limitations, two-dimensional material-based reconfigurable functional electronic devices are considered the most promising novel device architectures beyond Moore strategies. While these devices have garnered significant attention, they often require complex device fabrication processes and extra electric fields. Additionally, the device performance is usually limited by the metal-semiconductor interface properties. In this Letter, we have constructed a reconfigurable logic device based on a WSe2 transistor with a nanofloating gate and split-gates through van der Waals integration. This device achieves a small Schottky barrier height due to the van der Waals contacts. By varying the split-gate biases, we can realize volatile reconfigurable homojunctions as well as AND, OR, NOR, and NAND logic operations with just a single device. Furthermore, with the charge trapping effect of nanofloating gate, we can also achieve nonvolatile reconfigurable homojunctions, as well as AND and OR logic operations. The volatile and nonvolatile logic operations are similar to the short-term plasticity and long-term plasticity, respectively, of synapses in the human brain. This work offers a potential approach for creating novel reconfigurable functional electronic devices with a simple fabrication process and low cost.

Original languageEnglish
Pages (from-to)9979-9986
Number of pages8
JournalJournal of Physical Chemistry Letters
Volume15
Issue number39
DOIs
Publication statusPublished - 3 Oct 2024

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