Controllable threshold voltage shifts of polymer transistors and inverters by utilizing gold nanoparticles

We have demonstrated controllable threshold voltage (V _th) shifts of gold nanoparticles (Au NPs)/poly (3-hexylthiophene) (P3HT) based composite transistors that are fabricated through a low temperature facile technique. By varying the doping concentration of gold nanoparticles in P3HT matrix, V _th has been tuned from 12 V to 27 V without device degradation. Using this technique, the switching voltages of unipolar inverters have also been systematically tuned. Efficient hole conduction and a variation in P3HT crystallinity was observed due to different concentrations of Au NPs which eventually shift the threshold voltage of the devices in a controlled manner.