Charge transport in monolayer poly(3-hexylthiophene) thin-film transistors

Zong Xiang Xu; V. A.L. Roy

doi:10.1088/1674-1056/23/4/048501

Charge transport in monolayer poly(3-hexylthiophene) thin-film transistors

Zong Xiang Xu
, V. A.L. Roy

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

It is found that ultrathin poly(3-hexylthiophene) (P3HT) film with a 2.5 nm-thick layer exhibits a higher mobility of 5.0×10^-2 cm ²/V·s than its bulk counterpart. The crystalline structure of the as-fabricated ultrathin P3HT layer is verified by atomic force microscopy as well as grazing incidence X-ray diffraction. Transient measurements of the as-fabricated transistors reveal the influence of the interface traps on charge transport. These results are explained by the trap energy level distribution at the interface manipulated by layers of polymer film.

Original language	English
Article number	048501
Journal	Chinese Physics B
Volume	23
Issue number	4
DOIs	https://doi.org/10.1088/1674-1056/23/4/048501
Publication status	Published - Apr 2014
Externally published	Yes

Keywords

field-effect transistor
grazing incidence X-ray diffraction
monolayer P3HT
spin coating

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10.1088/1674-1056/23/4/048501

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title = "Charge transport in monolayer poly(3-hexylthiophene) thin-film transistors",

abstract = "It is found that ultrathin poly(3-hexylthiophene) (P3HT) film with a 2.5 nm-thick layer exhibits a higher mobility of 5.0×10-2 cm 2/V·s than its bulk counterpart. The crystalline structure of the as-fabricated ultrathin P3HT layer is verified by atomic force microscopy as well as grazing incidence X-ray diffraction. Transient measurements of the as-fabricated transistors reveal the influence of the interface traps on charge transport. These results are explained by the trap energy level distribution at the interface manipulated by layers of polymer film.",

keywords = "field-effect transistor, grazing incidence X-ray diffraction, monolayer P3HT, spin coating",

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AU - Xu, Zong Xiang

AU - Roy, V. A.L.

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N2 - It is found that ultrathin poly(3-hexylthiophene) (P3HT) film with a 2.5 nm-thick layer exhibits a higher mobility of 5.0×10-2 cm 2/V·s than its bulk counterpart. The crystalline structure of the as-fabricated ultrathin P3HT layer is verified by atomic force microscopy as well as grazing incidence X-ray diffraction. Transient measurements of the as-fabricated transistors reveal the influence of the interface traps on charge transport. These results are explained by the trap energy level distribution at the interface manipulated by layers of polymer film.

AB - It is found that ultrathin poly(3-hexylthiophene) (P3HT) film with a 2.5 nm-thick layer exhibits a higher mobility of 5.0×10-2 cm 2/V·s than its bulk counterpart. The crystalline structure of the as-fabricated ultrathin P3HT layer is verified by atomic force microscopy as well as grazing incidence X-ray diffraction. Transient measurements of the as-fabricated transistors reveal the influence of the interface traps on charge transport. These results are explained by the trap energy level distribution at the interface manipulated by layers of polymer film.

KW - field-effect transistor

KW - grazing incidence X-ray diffraction

KW - monolayer P3HT

KW - spin coating

UR - https://www.scopus.com/pages/publications/84899571764

U2 - 10.1088/1674-1056/23/4/048501

DO - 10.1088/1674-1056/23/4/048501

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SN - 1674-1056

VL - 23

JO - Chinese Physics B

JF - Chinese Physics B

IS - 4

M1 - 048501

ER -

Charge transport in monolayer poly(3-hexylthiophene) thin-film transistors

Abstract

Keywords

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