An upconverted photonic nonvolatile memory

Ye Zhou; Su Ting Han; Xian Chen; Feng Wang; Yong Bing Tang; V. A.L. Roy

doi:10.1038/ncomms5720

An upconverted photonic nonvolatile memory

Ye Zhou, Su Ting Han, Xian Chen, Feng Wang, Yong Bing Tang, V. A.L. Roy

Research output: Contribution to journal › Article › peer-review

128 Citations (Scopus)

Abstract

Conventional flash memory devices are voltage driven and found to be unsafe for confidential data storage. To ensure the security of the stored data, there is a strong demand for developing novel nonvolatile memory technology for data encryption. Here we show a photonic flash memory device, based on upconversion nanocrystals, which is light driven with a particular narrow width of wavelength in addition to voltage bias. With the help of near-infrared light, we successfully manipulate the multilevel data storage of the flash memory device. These upconverted photonic flash memory devices exhibit high ON/OFF ratio, long retention time and excellent rewritable characteristics.

Original language	English
Article number	4720
Journal	Nature Communications
Volume	5
DOIs	https://doi.org/10.1038/ncomms5720
Publication status	Published - 21 Aug 2014
Externally published	Yes

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title = "An upconverted photonic nonvolatile memory",

abstract = "Conventional flash memory devices are voltage driven and found to be unsafe for confidential data storage. To ensure the security of the stored data, there is a strong demand for developing novel nonvolatile memory technology for data encryption. Here we show a photonic flash memory device, based on upconversion nanocrystals, which is light driven with a particular narrow width of wavelength in addition to voltage bias. With the help of near-infrared light, we successfully manipulate the multilevel data storage of the flash memory device. These upconverted photonic flash memory devices exhibit high ON/OFF ratio, long retention time and excellent rewritable characteristics.",

author = "Ye Zhou and Han, {Su Ting} and Xian Chen and Feng Wang and Tang, {Yong Bing} and Roy, {V. A.L.}",

note = "Funding Information: We acknowledge grants from the City University of Hong Kong{\textquoteright}s Strategic Research Grant Project No. 7002724, the Research Grants Council of the Hong Kong Special Administrative Region (Project No. T23-713/11) and Shenzhen Municipality Project No. JCYJ20120618115445056. F.W. is grateful to CityU for a start-up grant and to the Ministry of Education of the People{\textquoteright}s Republic of China for an Exchange Program between Universities in Hong Kong and in the Mainland. We thank Mr Bing Chen at the Zhejiang University for his help on excited-state lifetime measurements.",

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AU - Han, Su Ting

AU - Chen, Xian

AU - Wang, Feng

AU - Tang, Yong Bing

AU - Roy, V. A.L.

N1 - Funding Information: We acknowledge grants from the City University of Hong Kong’s Strategic Research Grant Project No. 7002724, the Research Grants Council of the Hong Kong Special Administrative Region (Project No. T23-713/11) and Shenzhen Municipality Project No. JCYJ20120618115445056. F.W. is grateful to CityU for a start-up grant and to the Ministry of Education of the People’s Republic of China for an Exchange Program between Universities in Hong Kong and in the Mainland. We thank Mr Bing Chen at the Zhejiang University for his help on excited-state lifetime measurements.

PY - 2014/8/21

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N2 - Conventional flash memory devices are voltage driven and found to be unsafe for confidential data storage. To ensure the security of the stored data, there is a strong demand for developing novel nonvolatile memory technology for data encryption. Here we show a photonic flash memory device, based on upconversion nanocrystals, which is light driven with a particular narrow width of wavelength in addition to voltage bias. With the help of near-infrared light, we successfully manipulate the multilevel data storage of the flash memory device. These upconverted photonic flash memory devices exhibit high ON/OFF ratio, long retention time and excellent rewritable characteristics.

AB - Conventional flash memory devices are voltage driven and found to be unsafe for confidential data storage. To ensure the security of the stored data, there is a strong demand for developing novel nonvolatile memory technology for data encryption. Here we show a photonic flash memory device, based on upconversion nanocrystals, which is light driven with a particular narrow width of wavelength in addition to voltage bias. With the help of near-infrared light, we successfully manipulate the multilevel data storage of the flash memory device. These upconverted photonic flash memory devices exhibit high ON/OFF ratio, long retention time and excellent rewritable characteristics.

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An upconverted photonic nonvolatile memory

Abstract

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