An analytical two-dimensional model for circular spreading-resistance temperature sensor based on thin silicon film

Z. H. Wu; P. T. Lai; Bin Li; P. C.K. Kwok; B. Y. Liu; X. R. Zheng

doi:10.1016/j.sse.2004.07.005

An analytical two-dimensional model for circular spreading-resistance temperature sensor based on thin silicon film

Z. H. Wu, P. T. Lai, Bin Li, P. C.K. Kwok, B. Y. Liu, X. R. Zheng

Hong Kong Metropolitan University

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

An analytical two-dimensional model is developed to explain the minority-carrier exclusion effect in circular spreading-resistance temperature (SRT) sensor fabricated on thin silicon film. The model can be used to show the relation between minority-carrier exclusion length and maximum operating temperature of the sensor under different bias currents and different doping levels. Comparison is made between the proposed model and the conventional one-dimensional model used for similar sensors with rectangular shape. Experimental results show that the new model is more accurate than the one-dimensional model for predicting the characteristics of the circular SRT sensor.

Original language	English
Pages (from-to)	25-30
Number of pages	6
Journal	Solid-State Electronics
Volume	49
Issue number	1
DOIs	https://doi.org/10.1016/j.sse.2004.07.005
Publication status	Published - Jan 2005

Keywords

Minority-carrier exclusion
Silicon film
Temperature sensor
Two-dimensional model

Access to Document

10.1016/j.sse.2004.07.005

Cite this

@article{bf0e4646b90547ac93a3020565b6d7f4,

title = "An analytical two-dimensional model for circular spreading-resistance temperature sensor based on thin silicon film",

abstract = "An analytical two-dimensional model is developed to explain the minority-carrier exclusion effect in circular spreading-resistance temperature (SRT) sensor fabricated on thin silicon film. The model can be used to show the relation between minority-carrier exclusion length and maximum operating temperature of the sensor under different bias currents and different doping levels. Comparison is made between the proposed model and the conventional one-dimensional model used for similar sensors with rectangular shape. Experimental results show that the new model is more accurate than the one-dimensional model for predicting the characteristics of the circular SRT sensor.",

keywords = "Minority-carrier exclusion, Silicon film, Temperature sensor, Two-dimensional model",

author = "Wu, {Z. H.} and Lai, {P. T.} and Bin Li and Kwok, {P. C.K.} and Liu, {B. Y.} and Zheng, {X. R.}",

note = "Funding Information: This work is financially supported by the RGC grant of Hong Kong, and the CRCG grant of the University of Hong Kong.",

year = "2005",

month = jan,

doi = "10.1016/j.sse.2004.07.005",

language = "English",

volume = "49",

pages = "25--30",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Ltd.",

number = "1",

}

TY - JOUR

T1 - An analytical two-dimensional model for circular spreading-resistance temperature sensor based on thin silicon film

AU - Wu, Z. H.

AU - Lai, P. T.

AU - Li, Bin

AU - Kwok, P. C.K.

AU - Liu, B. Y.

AU - Zheng, X. R.

N1 - Funding Information: This work is financially supported by the RGC grant of Hong Kong, and the CRCG grant of the University of Hong Kong.

PY - 2005/1

Y1 - 2005/1

N2 - An analytical two-dimensional model is developed to explain the minority-carrier exclusion effect in circular spreading-resistance temperature (SRT) sensor fabricated on thin silicon film. The model can be used to show the relation between minority-carrier exclusion length and maximum operating temperature of the sensor under different bias currents and different doping levels. Comparison is made between the proposed model and the conventional one-dimensional model used for similar sensors with rectangular shape. Experimental results show that the new model is more accurate than the one-dimensional model for predicting the characteristics of the circular SRT sensor.

AB - An analytical two-dimensional model is developed to explain the minority-carrier exclusion effect in circular spreading-resistance temperature (SRT) sensor fabricated on thin silicon film. The model can be used to show the relation between minority-carrier exclusion length and maximum operating temperature of the sensor under different bias currents and different doping levels. Comparison is made between the proposed model and the conventional one-dimensional model used for similar sensors with rectangular shape. Experimental results show that the new model is more accurate than the one-dimensional model for predicting the characteristics of the circular SRT sensor.

KW - Minority-carrier exclusion

KW - Silicon film

KW - Temperature sensor

KW - Two-dimensional model

UR - http://www.scopus.com/inward/record.url?scp=9544230706&partnerID=8YFLogxK

U2 - 10.1016/j.sse.2004.07.005

DO - 10.1016/j.sse.2004.07.005

M3 - Article

AN - SCOPUS:9544230706

SN - 0038-1101

VL - 49

SP - 25

EP - 30

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 1

ER -

An analytical two-dimensional model for circular spreading-resistance temperature sensor based on thin silicon film

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this