Ambipolar charge transport and electroluminescence properties of ZnO nanorods

Chun Yuen Wong; Lo Ming Lai; Siu Ling Leung; V. A.L. Roy; Edwin Yue Bun Pun

doi:10.1063/1.2957671

Ambipolar charge transport and electroluminescence properties of ZnO nanorods

Chun Yuen Wong, Lo Ming Lai, Siu Ling Leung, V. A.L. Roy, Edwin Yue Bun Pun

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

Hexagonal ZnO nanorod arrays have been prepared by a simple low-temperature ZnO-nanocrystal-assisted hydrothermal method. The photoluminescence spectrum of the ZnO nanorods features a weak band-edge emission at λmax ∼3.3 eV and a strong broad yellow emission at λmax ∼2.17 eV. Unlike the conventional reported n -type semiconducting property, our ZnO nanorods exhibit ambipolar charge transporting behavior. Using bottom contact field-effect transistor structure, the ZnO nanorods exhibit electron and hole mobilities up to 3.2 and 2.1 cm2 V^-1 s^-1, respectively. Electroluminescence in the visible region from the nanorod-based device has also been demonstrated.

Original language	English
Article number	023502
Journal	Applied Physics Letters
Volume	93
Issue number	2
DOIs	https://doi.org/10.1063/1.2957671
Publication status	Published - 14 Jul 2008
Externally published	Yes

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title = "Ambipolar charge transport and electroluminescence properties of ZnO nanorods",

abstract = "Hexagonal ZnO nanorod arrays have been prepared by a simple low-temperature ZnO-nanocrystal-assisted hydrothermal method. The photoluminescence spectrum of the ZnO nanorods features a weak band-edge emission at λmax ∼3.3 eV and a strong broad yellow emission at λmax ∼2.17 eV. Unlike the conventional reported n -type semiconducting property, our ZnO nanorods exhibit ambipolar charge transporting behavior. Using bottom contact field-effect transistor structure, the ZnO nanorods exhibit electron and hole mobilities up to 3.2 and 2.1 cm2 V-1 s-1, respectively. Electroluminescence in the visible region from the nanorod-based device has also been demonstrated.",

author = "Wong, {Chun Yuen} and Lai, {Lo Ming} and Leung, {Siu Ling} and Roy, {V. A.L.} and Pun, {Edwin Yue Bun}",

note = "Funding Information: This work was supported by grants from City University of Hong Kong [No. 7002089 (C.-Y.W.)], Seed Funding (No. 200710159021), Hung Hing Ying Funding (V.A.L.R.), and University Development Fund of The University of Hong Kong. We are grateful to Professor Chi-Ming Che of HKU for the use of facilities at HKU-CAS Joint Laboratory on New Materials, and Dr. Stephen Sin-Yin Chui of HKU for XRD measurement. ",

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T1 - Ambipolar charge transport and electroluminescence properties of ZnO nanorods

AU - Wong, Chun Yuen

AU - Lai, Lo Ming

AU - Leung, Siu Ling

AU - Roy, V. A.L.

AU - Pun, Edwin Yue Bun

N1 - Funding Information: This work was supported by grants from City University of Hong Kong [No. 7002089 (C.-Y.W.)], Seed Funding (No. 200710159021), Hung Hing Ying Funding (V.A.L.R.), and University Development Fund of The University of Hong Kong. We are grateful to Professor Chi-Ming Che of HKU for the use of facilities at HKU-CAS Joint Laboratory on New Materials, and Dr. Stephen Sin-Yin Chui of HKU for XRD measurement.

PY - 2008/7/14

Y1 - 2008/7/14

N2 - Hexagonal ZnO nanorod arrays have been prepared by a simple low-temperature ZnO-nanocrystal-assisted hydrothermal method. The photoluminescence spectrum of the ZnO nanorods features a weak band-edge emission at λmax ∼3.3 eV and a strong broad yellow emission at λmax ∼2.17 eV. Unlike the conventional reported n -type semiconducting property, our ZnO nanorods exhibit ambipolar charge transporting behavior. Using bottom contact field-effect transistor structure, the ZnO nanorods exhibit electron and hole mobilities up to 3.2 and 2.1 cm2 V-1 s-1, respectively. Electroluminescence in the visible region from the nanorod-based device has also been demonstrated.

AB - Hexagonal ZnO nanorod arrays have been prepared by a simple low-temperature ZnO-nanocrystal-assisted hydrothermal method. The photoluminescence spectrum of the ZnO nanorods features a weak band-edge emission at λmax ∼3.3 eV and a strong broad yellow emission at λmax ∼2.17 eV. Unlike the conventional reported n -type semiconducting property, our ZnO nanorods exhibit ambipolar charge transporting behavior. Using bottom contact field-effect transistor structure, the ZnO nanorods exhibit electron and hole mobilities up to 3.2 and 2.1 cm2 V-1 s-1, respectively. Electroluminescence in the visible region from the nanorod-based device has also been demonstrated.

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DO - 10.1063/1.2957671

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JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

Ambipolar charge transport and electroluminescence properties of ZnO nanorods

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